8-10mw 1653.5nm Butterfly Laser Diode for Gas Detection

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Description

The 8-10mw 1653.5nm Butterfly Laser Diode for gas detection (ultra narrow linewidth 1653nm butterfly laser diode) are provided in a 14-pin butterfly package.The equipment adopts the high-quality InGaAsP/InP strained MQW-DFB laser chip and is outfitted with a built-in cooler to prevent the equipment from overheating.It delivers single-mode optic fiber output and high-speed modulation at a maximum output power of 10MW.This series of laser equipment is designed based on external-cavity lasers with a built-in fiber Bragg grating which ensures a stabilized wavelength output,ultra-narrow spectral linewidth,and outstanding side-mode suppression ratio.It is commonly used in many scientific research fields as the optical gas detector,optical chemical sensor,optical testing equipment,fiber performance testing equipment,and the light source of OTDR systems.

Features
◆ The Butterfly Laser Diode are capable of producing laser light at a stabilized wavelength.
◆ Typical values for the equipment are up to 1653.3nm for the peak wavelength, spectral linewidth up to 100 KHz, minimum output power 8MW, and minimum SMSR 35dB.
◆ The equipment is supplied with a thermoelectric cooler and thermistor.

Absolute Maximum Ratings

Parameter	Symbol	Condition	Min.	Max.	Unit
Reverse Voltage	Vr			2	V
Forward Current	If			120	mA
Forward Voltage	Vf	Iop		2.5	V
Operating Temperature	Tc	Iop	0	60	°C
Storage Temperature	Tlaser	Iop	-40	85	°c
Thermoelectric Cooler Voltage	Vtec			3.0	V
Thermoelectric Cooler Current	Ltec		-40	1.8	A
Storage Temperature	Tstg	Unbiased	5	85	°C
Storage Humidity	-			85	%RH
Lead Soldering Temperature	Stemp			260	°C
Lead Soldering Time	Stime			10	sec

Optical & Electrical Characteristics

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Optical Output Power	Po	CW	6	8	-	mW
Threshold Current	Ith	CW	-	25	35	mA
Operating Current	Iop	Po=PL, TL=25 °C	-	80	100	mA
Operation Voltage	Vop	Po=PL	-	1.2	2.0	V
Slope Efficiency	η	Po=PL, TL=25 °C		0.1	-	mW/mA
Peak Wavelength	λP	Po=PL, TL=25 °C	1652	1653.5	1655	nm
Side Mode Suppression	SMST	Po=PL, TL=25 °C	35	-	-	dB
Line width	Δλ	Po=PL, TL=25 °C	-	-	10	MHz
Thermistor Resistance	Rt	T=25℃	9.5	-	10.5	kΩ
Thermistor B Constant	B	T=25℃	-	3900	-	k
Laser Set temperature	TL	-	15	25	35	℃
Monitor Current	Imon	Vrpd=5v	50	-	150
Monitor Dark Current	ID	Vrpd=5v	-	-	200	nA
TEC Current	IC	ΔT=40℃	-	-	1.5	A
TEC Voltage	VC	ΔT=40℃	-	-	2.0	V

Pin Description

1	Thermistor	8	Ground
2	Thermistor	9	Ground
3	LD (N) bias	10	Ground
4	Detector (P)	11	LD (P), ground
5	Detector (N)	12	LD (N), RF modulation
6	TEC (+)	13	LD (P), ground
7	TEC (-)	14	Ground

Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.