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60mw-80mw 1310nm Pulse Laser Diode

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Description

The 60mw-80mw 1310nm pulse laser diode uses an internationally known brand name chip,and features a maximum output power of 130mw.It is often used in OTDR systems.

 

Absolute Maximum Ratings 

Parameter Symbol Min. Max. Unit
Pulsed Forward Current IFP   750 mA
Reverse Voltage VR   2 V
Reverse Voltage (monitor PD) VRM   10 V
Reverse Current (monitor PD) IFPM   2 mA
Operating Temperature TC 0 60 °C
Storage Temperature Tstg -40 85 °C
Lead Soldering Temperature Tsld   260(10s) °c
Relative Humidity (Noncoagulable) RH   85

 

 

Optical & Electrical Characteristics  

Parameter Symbol Min. Typ. Max. Unit Notes
Forward Voltage VFP     3.5 V IFP = 450 mA, PW = 10 μs, Duty = 1%
Threshold Current Ith   10 15 mA  
Optical Output Power From SM Fiber Pf 20 80   mW IFP =450 mA, PW = 10 μs, Duty = 1%
Center Wavelength λc 1290 1310 1330 nm PW = 10 μs, Duty = 1%
Spectral Width σ     4 nm RMS (-3 dB)
Rise Time tr   0.5 2.0 ns 10-90%
Fall Time tf   0.5 2.0 ns 90-10%
Monitor Current Im 0.05   2 mA VRM = 2V 

 

 
Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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